I am currently writing a technical paper - non-profit. And it need to be checked, before I submit it. I would appreciate if you check usage of proper words and its structure. Thanks. 
P.S. The second part is almost names, so it shouldn't take a lot of time.
This is the introduction :
"Chemical Vapor Deposition (CVD) can be defined as the deposition of a solid on a heated surface from a chemical reaction in the vapor phase. The process is often used in the fabrication of microelectronic and Micro Electro Mechanical Systems (MEMS) to produce high purity thin films. Polysilicon is a key material in production of these devices. Silicon in solid phase requires enormous energy to change its phase to gas. Insist of direct deposition of silicon, chemical deposition of silicon’s compound, SiH4 (Silane), in gas phase is vastly used. This reaction is usually performed in Low Pressure Chemical Vapor Deposition (LPCVD) systems. During the process, polycrystallines of silicon, also known as polysilicon, take shape on surface of substrates. Another product of this reaction is hydrogen, that will be exhausted by vacuum pumps attached to the reaction chamber. Flow of injected gas usually is composition of silan with Nitrogen or Hydrogen, which in each case applied conditions is different. In the other hand, both MEMS and microelectronic devices require pure coated layers; in a vacuumed systems it is ensured that lowest plurality enters the reaction chamber. The decomposition of silan in a chamber with approximate pressure of 0.5 torr needs temperature around 600°C. Two common methods to increase temperature of reactions near the substrates are: using electrical resistance heaters, also known as hot-wall LPCVD, and using RF-generators, also known as cold-wall LPCVD. Industries mostly utilize hot-wall systems, because they are simpler and cheaper for industrial purposes. After temperature and pressure, amount and direction of injected gas’s flow into the system and arrangement of wafers have a great impact in uniformity of deposited layers. In our case, we have many standing wafers close to each others, and uniform deposition on surface of all wafers is expected, so we must place injection channel at its best situation.
In this paper, we studied effective factors in uniformity and speed of deposition of silan with horizontal wafers of silicon in industrial version of SEMATECH BTU/Bruce. To achieving accurate result, we performed a simulation based of a finite element model. In order to attain highest accuracy possible, it is tried to use the best meshing size for each part. We faced a tradeoff between costs and results, so we used finest meshing for most critical parts and moderate size of meshing for less effective parts in quality of deposited layers. There are several works on simulation of heat transfer process in an LPCVD reactor. Van Schravendijk and De Koning, Hirasawa and Takagaki , Badgwell et al., Coronell and Jensen and some others, developed radiative heat transfer models. These models are based on energy balance equations for the insulation, reactor doors, heating coils, process tube and wafers. The Energy balance equations in these models were solved iteratively by numerical methods. He et al. developed a direct method to solve energy balance equations using matrix operations. They have divided the furnace area into cylindrical finite area sections and solveradiative heat transfer equations for each section. Park et al.presented analyses of heat transfer in an LPCVD reactor with thermal modelsvery similar to Badgwell’s except that specular reflection was considered .Houf et al.[ref] developed a general fundamental model for LPCVD in a multi-wafer reactor. They modeled the deposition process using analytical heat transfer and mass transfer equations and mechanisms inside the reaction chamber.
Proportionally, we have found lesser works on simulation of LPCVD process by Computational Fluid Dynamics (CFD) methods. Cocheteau et al. provided a new kinetic scheme using CFD simulation for silicon nano-crystal formation by LPCVD of Silane. They created a model for a vertical hot-wall multi-wafer LPCVD.
What we have done in this research includes finite element modeling of a horizontal hot-wall LPCVD reactor and simulating heat transfer and gas stream in the reaction chamber using a CFD software.
In the next section, simulation assumptions and preliminaries are presented, and section 3 contains simulations results."
P.S. The second part is almost names, so it shouldn't take a lot of time.
This is the introduction :
"Chemical Vapor Deposition (CVD) can be defined as the deposition of a solid on a heated surface from a chemical reaction in the vapor phase. The process is often used in the fabrication of microelectronic and Micro Electro Mechanical Systems (MEMS) to produce high purity thin films. Polysilicon is a key material in production of these devices. Silicon in solid phase requires enormous energy to change its phase to gas. Insist of direct deposition of silicon, chemical deposition of silicon’s compound, SiH4 (Silane), in gas phase is vastly used. This reaction is usually performed in Low Pressure Chemical Vapor Deposition (LPCVD) systems. During the process, polycrystallines of silicon, also known as polysilicon, take shape on surface of substrates. Another product of this reaction is hydrogen, that will be exhausted by vacuum pumps attached to the reaction chamber. Flow of injected gas usually is composition of silan with Nitrogen or Hydrogen, which in each case applied conditions is different. In the other hand, both MEMS and microelectronic devices require pure coated layers; in a vacuumed systems it is ensured that lowest plurality enters the reaction chamber. The decomposition of silan in a chamber with approximate pressure of 0.5 torr needs temperature around 600°C. Two common methods to increase temperature of reactions near the substrates are: using electrical resistance heaters, also known as hot-wall LPCVD, and using RF-generators, also known as cold-wall LPCVD. Industries mostly utilize hot-wall systems, because they are simpler and cheaper for industrial purposes. After temperature and pressure, amount and direction of injected gas’s flow into the system and arrangement of wafers have a great impact in uniformity of deposited layers. In our case, we have many standing wafers close to each others, and uniform deposition on surface of all wafers is expected, so we must place injection channel at its best situation.
In this paper, we studied effective factors in uniformity and speed of deposition of silan with horizontal wafers of silicon in industrial version of SEMATECH BTU/Bruce. To achieving accurate result, we performed a simulation based of a finite element model. In order to attain highest accuracy possible, it is tried to use the best meshing size for each part. We faced a tradeoff between costs and results, so we used finest meshing for most critical parts and moderate size of meshing for less effective parts in quality of deposited layers. There are several works on simulation of heat transfer process in an LPCVD reactor. Van Schravendijk and De Koning, Hirasawa and Takagaki , Badgwell et al., Coronell and Jensen and some others, developed radiative heat transfer models. These models are based on energy balance equations for the insulation, reactor doors, heating coils, process tube and wafers. The Energy balance equations in these models were solved iteratively by numerical methods. He et al. developed a direct method to solve energy balance equations using matrix operations. They have divided the furnace area into cylindrical finite area sections and solveradiative heat transfer equations for each section. Park et al.presented analyses of heat transfer in an LPCVD reactor with thermal modelsvery similar to Badgwell’s except that specular reflection was considered .Houf et al.[ref] developed a general fundamental model for LPCVD in a multi-wafer reactor. They modeled the deposition process using analytical heat transfer and mass transfer equations and mechanisms inside the reaction chamber.
Proportionally, we have found lesser works on simulation of LPCVD process by Computational Fluid Dynamics (CFD) methods. Cocheteau et al. provided a new kinetic scheme using CFD simulation for silicon nano-crystal formation by LPCVD of Silane. They created a model for a vertical hot-wall multi-wafer LPCVD.
What we have done in this research includes finite element modeling of a horizontal hot-wall LPCVD reactor and simulating heat transfer and gas stream in the reaction chamber using a CFD software.
In the next section, simulation assumptions and preliminaries are presented, and section 3 contains simulations results."
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Comments
I do know that this sentence needs help: Insist of direct deposition of silicon, chemical deposition of silicon’s compound, SiH4 (Silane), in gas phase is vastly used. It doesn't make sense.
Overall, there are some problems with articles, and silane became silan in there.
However, I think you need someone who specializes in technical editing to take a look.
In this paper, we studied effective factors in uniformity and speed of deposition of silane with horizontal wafers of silicon in an industrial version of a SEMATECH BTU Bruce. To achieve an accurate result, we performed a simulation based on a finite element model. In order to attain highest possible accuracy, meshing size was optimized for each part. We faced a tradeoff between costs and results, so we used the finest meshing for the most critical parts and moderate-size meshing for less important parts in regard to the quality of deposited layers. There are several works on the simulation of heat transfer processes in an LPCVD reactor. Van Schravendijk and De Koning, Hirasawa and Takagaki , Badgwell et al., Coronell and Jensen and some others developed radiative heat transfer models. These models are based on energy balance equations for the insulation, reactor doors, heating coils, process tube and wafers. The energy balance equations in these models were solved iteratively by numerical methods. He et al. developed a direct method to solve energy balance equations using matrix operations. They have divided the furnace area into cylindrical finite-area sections and solve radiative heat transfer equations for each section. Park et al. presented analyses of heat transfer in an LPCVD reactor with thermal models very similar to Badgwell’s except that specular reflection was considered. Houf et al. [ref] developed a general fundamental model for LPCVD in a multi-wafer reactor. They modeled the deposition process using analytical heat transfer and mass transfer equations and mechanisms inside the reaction chamber.
Proportionally, we have found lesser works on simulation of LPCVD process by Computational Fluid Dynamics (CFD) methods. Cocheteau et al. provided a new kinetic scheme using CFD simulation for silicon nano-crystal formation by LPCVD of xilane. They created a model for a vertical hot-wall multi-wafer LPCVD.
What we have done in this research includes finite-element modeling of a horizontal hot-wall LPCVD reactor and simulating heat transfer and gas stream in the reaction chamber using CFD software.
In the next section, simulation assumptions and preliminaries are presented, and section 3 contains simulations results.
I have corrected what I could. I do not understand the parts I have highlighted in red.
I meant we have found works less than what we have found in other areas. Is it correct?
And enoon, I wish I haven't bothered you with my writings. Thanks again.
In this paper, we studied effective factors in uniformity and speed of deposition of silane with horizontal wafers of silicon in an industrial version of a SEMATECH BTU Bruce. To achieve an accurate result, we performed a simulation based on a finite element model. In order to attain highest possible accuracy, meshing size was optimized for each part. We faced a tradeoff between costs and results, so we used the finest meshing for the most critical parts and moderate-size meshing for less important parts in regard to the quality of deposited layers. There are several works on the simulation of heat transfer processes in an LPCVD reactor. Van Schravendijk and De Koning, Hirasawa and Takagaki , Badgwell et al., Coronell and Jensen and some others developed radiative heat transfer models. These models are based on energy balance equations for the insulation, reactor doors, heating coils, process tube and wafers. The energy balance equations in these models were solved iteratively by numerical methods. He et al. developed a direct method to solve energy balance equations using matrix operations. They have divided the furnace area into cylindrical finite-area sections and solve radiative heat transfer equations for each section. Park et al. presented analyses of heat transfer in an LPCVD reactor with thermal models very similar to Badgwell’s except that specular reflection was considered. Houf et al. [ref] developed a general fundamental model for LPCVD in a multi-wafer reactor. They modeled the deposition process using analytical heat transfer and mass transfer equations and mechanisms inside the reaction chamber.
We have found fewer works on simulation of LPCVD process by Computational Fluid Dynamics (CFD) methods. Cocheteau et al. provided a new kinetic scheme using CFD simulation for silicon nano-crystal formation by LPCVD of xilane. They created a model for a vertical hot-wall multi-wafer LPCVD.
What we have done in this research includes finite-element modeling of a horizontal hot-wall LPCVD reactor and simulating heat transfer and gas stream in the reaction chamber using CFD software.
In the next section, simulation assumptions and preliminaries are presented, and section 3 contains simulations results.
I think that does it. Don't feel weird—I do this for fun, and your stuff is pretty cool. I just hope I didn't change anything important.